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2SA1812 / 2SA1727 / 2SA1776
Transistors
High-voltage Switching Transistor ( 400V, 0.5A)
2SA1812 / 2SA1727 / 2SA1776
Features 1) High breakdown voltage, BVCEO= 400V. 2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA. 3) High switching speed, typically tf : 1 s at IC = 100mA. 4) Wide SOA (safe operating area). Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SA1812 Collector power dissipation 2SA1727 2SA1776 Junction temperature Storage temperature Tj Tstg PC Symbol VCBO VCEO VEBO IC Limits 400 400 7 0.5 1.0 0.5 2 1 10 1 150 55 to +150 Unit V V V A (DC) A (Pulse) W W W W (Tc 25C) W 1 2
3
C C
1 Single pulse 2 When mounted on a 40 40 0.7mm ceramic board. 3 When t = 1.7mm and the foil collector area on the PC board is 1cm2 or greater.
Packaging specifications and hFE
Type Package hFE Marking Code Basic ordering unit (pieces)
Denotes hFE
2SA1812 MPT3 PQ AJ T100 3000
2SA1727 CPT3 PQ TL 3000
2SA1776 ATV PQ TV2 2500
Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current tranfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output capacitance Turn-on time Storage time Fall time Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton tstg tf 12 18 0.6 2.7 1 82 150 Min. 400 400 7 10 10 270 1 1.2 Typ. Max. Unit V V V A A V V MHz pF s s s IC IC IE VCB VEB VCE IC/IB IC/IB VCB VCE 50 A 1mA 50 A 400V 6V 5V , IC 50mA 100mA / 10mA 100mA / 10mA 5V , IE 10V , IE 50mA , f 0A , f 5MHz 1MHz Conditions
IC 100mA, RL 1.5k IB1 IB2 10mA VCC to 150V
Rev.A
1/3
2SA1812 / 2SA1727 / 2SA1776
Transistors
Electrical characteristic curves
-1 0mA
A
-0.5
COLLECTOR CURRENT : lC (A)
-0.4
-60
A -40m
-0.2 -0.1 -0.05 -0.02 -0.01
0C
DC CURRENT GAIN : hFE
-80
mA
COLLECTOR CURRENT : lC (A)
-2 0
11 -1 - -
AA A m 0m mA 00m 60 4 20 -1 mA
-1 -0.5
80
VCE=-5V
1000 500 200 100 50 20 10 5 2 1 -0.001 -0.005 -0.02 -0.1 -0.002 -0.01 -0.05
Ta=25C
m
VCE=-10V
-0.3
lB=
A -20m
-5V
-0.2
Ta=10
-0.1
0
Ta=25C
0 -2 -4 -6 -8 -10
-0.002 -0.001 -0.0005
0 -0.2-0.4-0.6-0.8-1.0-1.2-1.4-1.6 -1.8 -2.0
-25C
-0.005
25C
-0.2-0.5 -1
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (A)
Fig.1 Grouded emitter output characteristics
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
Fig.2 Grounded emitter propagation characteristics
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) BASE SATURATION VOLTAGE : VBE (sat) (V)
Fig.3 DC current gain vs. collector current ( )
1000 500
VCE=-5V
Ta=100C 25C
-10 -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -0.001 -0.005 -0.02 -0.1 -0.002 -0.01 -0.05
50 lC/lB= 20 10
Ta=25C
-10 -5 -2 -1 -0.5
25C 100C Ta=-25C VBE(sat) Ta=100C
lC/lB=10
DC CURRENT GAIN : hFE
200 100 50 20 10 5 2
-25C
-0.2 -0.1 -0.05 -0.02 -0.01 -0.001 -0.005 -0.02 -0.1 -0.002 -0.01 -0.05 -0.2-0.5 -1
VCE(sat)
-25C
25C
1 -0.001 -0.005 -0.02 -0.1 -0.002 -0.01 -0.05
-0.2-0.5 -1
-0.2-0.5 -1
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current ( )
COLLECTOR OUTPUT CAPACITANCE : COb (pF)
Fig.5 Collector-emitter saturation voltage vs. collector current
Fig.6 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage vs. collector current
-10
TRANSITION FREQUENCY : fT (MHZ)
1000 500 200 100 50 20 10 5 2 1 0.0005 0.002 0.01 0.001 0.005
COLLECTOR CURRENT : lC (A)
Ta=25C VCE=-5V
1000 500 200 100 50 20 10 5 2 1 -0.05-0.1 -0.2 -0.5 -1
Ta=25C f=1MHZ lE=0A
-5 -2 -1 -0.5 -0.2 -0.1 -0.05
Ta=25C lC Max. (Pulse ) PW=10ms 100ms
-0.02 (When mounted on a -0.01 40 40 0.7mm ceramic board.) -0.005 Single -0.002 -0.001 -1
nonrepetitive pulse
0.02 0.050.1
0.2 0.5
-2 -5-10
-20 -50
-2 -5-10
-20 -50-100 -200-500
COLLECTOR CURRENT : IE (A)
COLLECTOR TO BASE VOLTAGE: VCB (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.7 TRANSITION FREQUENCY vs. EMITTER CURRENT
Fig.8 Collector output capacitance vs. collector-base voltage
Fig.9 Safe operating area (2SA1812)
Rev.A
2/3
2SA1812 / 2SA1727 / 2SA1776
Transistors
TRANSIENT THERMAL RESISTANCE : Rth (C / W)
100000 10000 1000
(2)
COLLECTOR CURRENT : lC (A)
(1) When mounted on a 40 40 0.7mm ceramic board (2) Unmounted
-10 -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01
nonrepetitive pulse lC Max. (Pulse ) DC PW=10ms 100ms
TRANSIENT THERMAL RESISTANCE : Rth (C / W)
100000
(1) Using Infinite heat sink (2) Unmounted
10000 1000 100 10 1 0.1 0.001 0.01
(2)
100 10 1 0.1 0.001 0.01
(1)
(1)
-0.005 Tc=25C Single -0.002 -0.001 -1 -2 -5 -10 -20 -50-100-200 -500-1000
0.1
1
10
100
1000
0.1
1
10
100
1000
PULSE WIDTH : PW (s)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
TIME : t (s)
Fig.10 TRANSIENT THERMAL RESISTANCE (2SA1812)
TRANSIENT THERMAL RESISTANCE : Rth (C / W)
Fig.11 Safe operating area (2SA1727)
Fig.12 TRANSIENT THERMAL RESISTANCE (2SA1727)
-10
100000 10000 1000 100 10 1 0.1 0.001 0.01
COLLECTOR CURRENT : lC (A)
-5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01
nonrepetitive lC Max. (Pulse ) DC PW=10ms 100ms
Using printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
-0.005 Ta=25C Single -0.002 pulse -0.001 -1 -2 -5 -10 -20 -50-100-200 -500-1000
0.1
1
10
100
1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
PULSE WIDTH : PW (s)
Fig.13 Safe operating area (2SA1776)
Fig.14 TRANSIENT THERMAL RESISTANCE (2SA1776)
Switching characteristic measurement circuit
RL=1.5k lC VIN lB1
IB IC
10%
lB2 lB1
RG
lB2
T.U.T
VCC_ -150V ~
lc PW
PW_ 50 s ~ < duty cycle=1
90% +VBB
ton tstg tf
Fig.15 Switching characteristic measurement circuit
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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